Infineon HEXFET Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC
- RS庫存編號:
- 165-5933
- 製造零件編號:
- IRF7241TRPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 165-5933
- 製造零件編號:
- IRF7241TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 6.2A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7241TRPBF
This MOSFET is designed for efficient power management in electronic circuits. With a P-channel configuration and a continuous drain current capability of 6.2A, it is suitable for various applications. Operating in enhancement mode further enhances its adaptability across different electronic devices, making it an essential component in automation and electrical systems.
Features & Benefits
• Supports a maximum drain-source voltage of 40V for strong performance
• Low on-resistance of 70mΩ improves efficiency and minimises heat generation
• Can withstand a maximum operating temperature of +150°C
• Broad gate voltage range allows for flexible design integration
• Single transistor configuration simplifies circuit layout and saves space
• Typical gate charge of 53nC at 10V enables quick switching
Applications
• Utilised in power management systems for automation
• Appropriate for driving loads in consumer electronics
• Employed in power conversion and regulation circuits
• Incorporated into various electrical industry
• Integrated into motor control and industrial automation systems
What is the significance of the low RDS(on) measurement?
A low RDS(on) measurement indicates lower power losses during operation, leading to improved efficiency and reduced heat generation.
How does the maximum gate-source voltage affect performance?
The maximum gate-source voltage range allows for wider compatibility with different driver circuits, ensuring reliable switching across various operating conditions.
What precautions should be taken during installation?
Ensure proper thermal management and verify that the operating conditions stay within the specified maximum ratings, particularly for voltage and temperature.
How does enhancement mode behaviour affect circuit design?
Enhancement mode operation means the transistor is off at zero gate voltage, resulting in lower power consumption during standby and enhancing overall circuit reliability.
相關連結
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