Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223
- RS庫存編號:
- 165-5560
- 製造零件編號:
- IRFL4315TRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 2500 件)*
TWD24,000.00
(不含稅)
TWD25,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD9.60 | TWD24,000.00 |
| 12500 + | TWD9.30 | TWD23,250.00 |
* 參考價格
- RS庫存編號:
- 165-5560
- 製造零件編號:
- IRFL4315TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF
This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.
Features & Benefits
• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
Applications
• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
What is the significance of the low Rds(on) value?
A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.
How does the wide temperature range affect usage?
The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.
Can it be used in both high and low-frequency applications?
Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.
What should be considered for installation?
Proper circuit layout and thermal management should be taken into account to optimise performance during installation.
How does the gate threshold voltage impact circuit design?
The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.
相關連結
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