STMicroelectronics STI28 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin I2PAK
- RS庫存編號:
- 164-6960
- 製造零件編號:
- STI28N60M2
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD3,990.00
(不含稅)
TWD4,189.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD79.80 | TWD3,990.00 |
| 100 - 150 | TWD78.10 | TWD3,905.00 |
| 200 + | TWD76.30 | TWD3,815.00 |
* 參考價格
- RS庫存編號:
- 164-6960
- 製造零件編號:
- STI28N60M2
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STI28 | |
| Package Type | I2PAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.3mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STI28 | ||
Package Type I2PAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 9.3mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)
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