ROHM RE1C002ZP Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SC-75 RE1C002ZPTL
- RS庫存編號:
- 148-6960
- 製造零件編號:
- RE1C002ZPTL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 200 件）*
TWD900.00
(不含稅)
TWD944.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 加上 600 件從 2026年8月10日 起發貨
- 最終 400 件從 2026年8月17日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 200 - 200 | TWD4.50 | TWD900.00 |
| 400 - 800 | TWD4.40 | TWD880.00 |
| 1000 - 1800 | TWD4.30 | TWD860.00 |
| 2000 - 9800 | TWD4.20 | TWD840.00 |
| 10000 + | TWD4.00 | TWD800.00 |
* 參考價格
- RS庫存編號:
- 148-6960
- 製造零件編號:
- RE1C002ZPTL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | RE1C002ZP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150mW | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series RE1C002ZP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150mW | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Length 1.7mm | ||
Automotive Standard No | ||
Low voltage(12V) drive type
Pch Small-signal MOSFET
Small Surface Mount Package
Pb Free/RoHS Compliant
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