N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3
- RS庫存編號:
- 146-1755
- 製造零件編號:
- IXFQ60N50P3
- 製造商:
- IXYS
58 現貨庫存，可於6工作日發貨。
單價（不含稅） 毎管：30 個
TWD263.60
(不含稅)
TWD276.78
(含稅)
單位 | 每單位 | Per Tube* |
|---|---|---|
| 30 - 120 | TWD263.60 | TWD7,908.00 |
| 150 + | TWD237.20 | TWD7,116.00 |
* 參考價格
- RS庫存編號:
- 146-1755
- 製造零件編號:
- IXFQ60N50P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 500 V |
| Series | HiperFET, Polar3 |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.9mm |
| Length | 15.8mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |