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MOSFETs
N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3PN IXYS IXFQ26N50P3
RS庫存編號:
146-1754
製造零件編號:
IXFQ26N50P3
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
216 現貨庫存,可於6工作日發貨。
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單位
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單價(不含稅) 毎管:30 個
TWD171.10
(不含稅)
TWD179.66
(含稅)
單位
每單位
Per Tube*
30 - 120
TWD171.10
TWD5,133.00
150 +
TWD154.00
TWD4,620.00
* 參考價格
RS庫存編號:
146-1754
製造零件編號:
IXFQ26N50P3
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
IXFA26N50P3, IXFP26N50P3, IXFQ26N50P3, IXFH26N50P3, Polar3 HiperFET Power MOSFETs, 500V 26A 240mOhm
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar3
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
42 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
15.8mm
Width
4.9mm
Height
20.3mm
Minimum Operating Temperature
-55 °C