onsemi Single N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRL640A
- RS庫存編號:
- 145-5670
- 製造零件編號:
- IRL640A
- 製造商:
- onsemi
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- RS庫存編號:
- 145-5670
- 製造零件編號:
- IRL640A
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Transistor Configuration | Single | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 18 A | |
| Maximum Drain Source Voltage (Vds) | 200 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Height | 16.3 mm | |
| Length | 10.67 mm | |
| Maximum Drain Source Resistance (Rds) | 180 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V, -20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 110 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 4.7 mm | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Transistor Configuration Single | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 18 A | ||
Maximum Drain Source Voltage (Vds) 200 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Height 16.3 mm | ||
Length 10.67 mm | ||
Maximum Drain Source Resistance (Rds) 180 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V, -20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 110 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 4.7 mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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