Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO BSC009NE2LS5ATMA1
- RS庫存編號:
- 133-9834
- 製造零件編號:
- BSC009NE2LS5ATMA1
- 製造商:
- Infineon
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小計(1 包,共 5 件)*
TWD329.00
(不含稅)
TWD345.45
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD65.80 | TWD329.00 |
* 參考價格
- RS庫存編號:
- 133-9834
- 製造零件編號:
- BSC009NE2LS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1
This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and Advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.
Features & Benefits
• Supports high current applications with a maximum continuous drain current of 223A
• Very low on-resistance enhances energy efficiency during operation
• Capable of withstanding a maximum drain-source voltage of 25V
• Features a Compact SuperSO8 package for efficient surface mounting
• Delivers effective thermal performance for heat dissipation
• 100% avalanche tested to ensure robust reliability
Applications
• Used in high-performance buck converters for efficient voltage regulation
• Suitable for power management in consumer electronics
• Implemented in automotive where Compact design is Crucial
• Utilised in renewable energy systems for effective power conversion
What is the optimal operating temperature range for installation?
The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.
Can it be used for synchronous rectification applications?
Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.
What handling precautions should be taken during installation?
Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.
How does the gate charge impact performance?
A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.
Is this component RoHS compliant?
Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.
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