ROHM RQ6E050AJ N-Channel MOSFET, 5 A, 30 V Enhancement, 6-Pin TSMT-6 RQ6E050AJTCR
- RS庫存編號:
- 133-3306
- 製造零件編號:
- RQ6E050AJTCR
- 製造商:
- ROHM
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- RS庫存編號:
- 133-3306
- 製造零件編號:
- RQ6E050AJTCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT-6 | |
| Series | RQ6E050AJ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | RoHS | |
| Height | 950μm | |
| Width | 1.8mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT-6 | ||
Series RQ6E050AJ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals RoHS | ||
Height 950μm | ||
Width 1.8mm | ||
- COO (Country of Origin):
- JP
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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