Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF

RS庫存編號:: 124-9004
製造零件編號:: IRFB3607PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD1,140.00

(不含稅)

TWD1,197.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 400 件從 2026年1月05日起發貨

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單位	每單位	每管*
50 - 50	TWD22.80	TWD1,140.00
100 - 150	TWD22.30	TWD1,115.00
200 +	TWD20.70	TWD1,035.00

* 參考價格

RS庫存編號:: 124-9004
製造零件編號:: IRFB3607PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	56nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.82 mm
	Standards/Approvals	No
	Length	10.66mm
	Height	9.02mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 56nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.82 mm
	Standards/Approvals No
	Length 10.66mm
	Height 9.02mm
	Automotive Standard No

COO (Country of Origin):: MX

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