ROHM UM6K33N Dual N-Channel MOSFET, 200 mA, 50 V, 6-Pin SOT-363 UM6K33NTN
- RS庫存編號:
- 124-6895
- 製造零件編號:
- UM6K33NTN
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 40 件）*
TWD340.00
(不含稅)
TWD356.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 280 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 40 - 160 | TWD8.50 | TWD340.00 |
| 200 - 360 | TWD7.60 | TWD304.00 |
| 400 - 960 | TWD7.40 | TWD296.00 |
| 1000 - 1960 | TWD7.10 | TWD284.00 |
| 2000 + | TWD6.90 | TWD276.00 |
* 參考價格
- RS庫存編號:
- 124-6895
- 製造零件編號:
- UM6K33NTN
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-363 (SC-88) | |
| Series | UM6K33N | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 7.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 150 mW | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.1mm | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-363 (SC-88) | ||
Series UM6K33N | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 7.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.1mm | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Dual N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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