STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 103-2002
- 製造零件編號:
- STB57N65M5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD295,900.00
(不含稅)
TWD310,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月30日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD295.90 | TWD295,900.00 |
| 5000 + | TWD290.00 | TWD290,000.00 |
* 參考價格
- RS庫存編號:
- 103-2002
- 製造零件編號:
- STB57N65M5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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