Microchip MSCSMC N-Channel MOSFET Modules, 236 A, 1.2 kV Enhancement Mode, 33-Pin Module MSCSMC120AM04TBZ2EG
- RS庫存編號:
- 931-017
- 製造零件編號:
- MSCSMC120AM04TBZ2EG
- 製造商:
- Microchip
N
小計（1 件）*
TWD4,609.00
(不含稅)
TWD4,839.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月10日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD4,609.00 |
* 參考價格
- RS庫存編號:
- 931-017
- 製造零件編號:
- MSCSMC120AM04TBZ2EG
- 製造商:
- Microchip
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Module | |
| Series | MSCSMC | |
| Mount Type | Direct | |
| Pin Count | 33 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Maximum Power Dissipation Pd | 604W | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.4mm | |
| Length | 56.7mm | |
| Width | 62.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Module | ||
Series MSCSMC | ||
Mount Type Direct | ||
Pin Count 33 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Maximum Gate Source Voltage Vgs 21V | ||
Maximum Power Dissipation Pd 604W | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Height 16.4mm | ||
Length 56.7mm | ||
Width 62.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
SiC technology ensures low switching and conduction losses
Integrated thermistor facilitates effective temperature monitoring
Low thermal resistance allows efficient heat dissipation
Ultra low weight and profile contribute to design flexibility
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