STMicroelectronics STB Series N channel-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9

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TWD117.00

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TWD122.85

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  • 2026年10月26日 發貨
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RS庫存編號:
839-144
製造零件編號:
STB25N018M9
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-263

Series

STB Series

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement Mode

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

320W

Maximum Operating Temperature

150°C

Width

10mm

Length

10.3mm

Height

4.5mm

Standards/Approvals

ROHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is an N-channel super-junction component built on Advanced MDmesh M9 technology. It enables smaller more Compact layouts without compromising thermal capacity.

D2PAK surface-mount assembly package style

Silicon-based multi-drain manufacturing process

Low gate charge with outstanding efficiency

Enhanced dv/dt capability and avalanche tested

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