ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- RS庫存編號:
- 780-669
- 製造零件編號:
- SCT2H12NWBTL1
- 製造商:
- ROHM
N
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單位 | 每單位 | 每膠帶* |
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| 2 - 18 | TWD127.50 | TWD255.00 |
| 20 - 98 | TWD112.50 | TWD225.00 |
| 100 + | TWD90.50 | TWD181.00 |
* 參考價格
- RS庫存編號:
- 780-669
- 製造零件編號:
- SCT2H12NWBTL1
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 15.5mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 0V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 15.5mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.2mm | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
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