Infineon OptiMOS N channel-Channel Power MOSFET, 339 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1

N
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TWD137.00

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TWD143.85

(含稅)

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  • 2026年6月19日 發貨
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100 +TWD68.00

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RS庫存編號:
762-986
製造零件編號:
IQFH99N06NM5ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

339A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSON-12

Series

OptiMOS

Mount Type

Surface Mount

Pin Count

12

Maximum Drain Source Resistance Rds

0.99mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

115nC

Maximum Power Dissipation Pd

214W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

1.1mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.

100% avalanche tested

Superior thermal resistance

N-channel

Pb-free lead plating, RoHS compliant

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