Infineon OptiMOS N channel-Channel Power MOSFET, 339 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1
- RS庫存編號:
- 762-986
- 製造零件編號:
- IQFH99N06NM5ATMA1
- 製造商:
- Infineon
N
可享批量折扣
查看批量定價選項小計（1 件）*
TWD140.00
(不含稅)
TWD147.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD140.00 |
| 10 - 49 | TWD113.00 |
| 50 - 99 | TWD87.00 |
| 100 + | TWD69.00 |
* 參考價格
- RS庫存編號:
- 762-986
- 製造零件編號:
- IQFH99N06NM5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 339A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TSON-12 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 339A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TSON-12 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.
100% avalanche tested
Superior thermal resistance
N-channel
Pb-free lead plating, RoHS compliant
相關連結
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH68N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH86N06NM5ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon IQF Type N-Channel Power Transistor 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1