製造零件編號

Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

RS庫存編號:: 349-390
製造零件編號:: IQFH55N04NM6ATMA1
製造商:: Infineon

Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

可享批量折扣

小計（1 包，共 2 件）*

TWD378.00

(不含稅)

TWD396.90

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

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單位	每單位	每包*
2 - 18	TWD189.00	TWD378.00
20 - 198	TWD170.00	TWD340.00
200 - 998	TWD157.00	TWD314.00
1000 - 1998	TWD145.50	TWD291.00
2000 +	TWD130.50	TWD261.00

* 參考價格

RS庫存編號:: 349-390
製造零件編號:: IQFH55N04NM6ATMA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	451A
	Maximum Drain Source Voltage Vds	40V
	Series	IQF
	Package Type	PG-TSON-12
	Mount Type	Surface
	Pin Count	12
	Maximum Drain Source Resistance Rds	0.55mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	118nC
	Maximum Power Dissipation Pd	214W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 451A
	Maximum Drain Source Voltage Vds 40V
	Series IQF
	Package Type PG-TSON-12
	Mount Type Surface
	Pin Count 12
	Maximum Drain Source Resistance Rds 0.55mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 118nC
	Maximum Power Dissipation Pd 214W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, RoHS
	Automotive Standard No

Datasheet - IQFH55N04NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.

Superior thermal resistance

N channel

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

訂單超過 $1,300.00 免費送貨

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