Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- RS庫存編號:
- 349-390
- 製造零件編號:
- IQFH55N04NM6ATMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 2 件）*
TWD378.00
(不含稅)
TWD396.90
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 3,000 件從 2026年6月29日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD189.00 | TWD378.00 |
| 20 - 198 | TWD170.00 | TWD340.00 |
| 200 - 998 | TWD157.00 | TWD314.00 |
| 1000 - 1998 | TWD145.50 | TWD291.00 |
| 2000 + | TWD130.50 | TWD261.00 |
* 參考價格
- RS庫存編號:
- 349-390
- 製造零件編號:
- IQFH55N04NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 451A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQF | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 451A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQF | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.
Superior thermal resistance
N channel
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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