Infineon OptiMOS N-Channel Power MOSFET, 199 A, 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L012ATMA1
- RS庫存編號:
- 762-929
- 製造零件編號:
- IAUZN04S7L012ATMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 件）*
TWD32.00
(不含稅)
TWD33.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,900 件從 2026年9月21日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 24 | TWD32.00 |
| 25 - 99 | TWD26.00 |
| 100 - 499 | TWD25.00 |
| 500 + | TWD24.00 |
* 參考價格
- RS庫存編號:
- 762-929
- 製造零件編號:
- IAUZN04S7L012ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 199A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 94W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.29mm | |
| Standards/Approvals | RoHS | |
| Length | 2.29mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 199A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 94W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.29mm | ||
Standards/Approvals RoHS | ||
Length 2.29mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon Automotive MOSFET Power-Transistor is an N-channel, enhancement-mode MOSFET designed for automotive applications. It operates in high-temperature conditions and features robust construction. Extended qualification beyond AEC-Q101.
Enhanced electrical testing
Robust design
RoHS compliant
100% Avalanche tested
相關連結
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N020ATMA2
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N026ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L025ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L019ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N013ATMA2
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L046ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N032ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N049ATMA1