Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 650 V Enhancement, 3-Pin TO-247 IMW65R075M2HXKSA1

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TWD193.00

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TWD202.65

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  • 2027年6月14日 發貨
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1 - 9TWD193.00
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RS庫存編號:
762-919
製造零件編號:
IMW65R075M2HXKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolSiC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

124W

Typical Gate Charge Qg @ Vgs

14.9nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

5.3mm

Length

21.5mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Ultra‑low switching losses

Enhances system robustness and reliability

Facilitates great ease of use and integration

Reduces the size, weight and bill of materials of the systems

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