Infineon CoolSiC N channel-Channel Power MOSFET, 43 A, 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R045M2HXTMA1
- RS庫存編號:
- 762-907
- 製造零件編號:
- IMLT40R045M2HXTMA1
- 製造商:
- Infineon
N
可享批量折扣
小計（1 件）*
TWD171.00
(不含稅)
TWD179.55
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD171.00 |
| 10 - 49 | TWD139.00 |
| 50 - 99 | TWD106.00 |
| 100 + | TWD85.00 |
* 參考價格
- RS庫存編號:
- 762-907
- 製造零件編號:
- IMLT40R045M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | CoolSiC | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface Mount | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 44.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Height | 15.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series CoolSiC | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface Mount | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 44.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Height 15.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
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