Infineon CoolSiC N channel-Channel Power MOSFET, 46 A, 400 V Enhancement, 3-Pin TO-247 IMW40R036M2HXKSA1
- RS庫存編號:
- 762-905
- 製造零件編號:
- IMW40R036M2HXKSA1
- 製造商:
- Infineon
N
可享批量折扣
小計（1 件）*
TWD246.00
(不含稅)
TWD258.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 236 件從 2026年5月18日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD246.00 |
| 10 - 49 | TWD200.00 |
| 50 - 99 | TWD153.00 |
| 100 + | TWD122.00 |
* 參考價格
- RS庫存編號:
- 762-905
- 製造零件編號:
- IMW40R036M2HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 20.8mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 20.8mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
相關連結
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 4-Pin TO-247-4 IMZA40R036M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R039M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R040M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R011M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R015M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R025M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R045M2HXKSA1