Infineon AIMBG75R N-Channel MOSFET, 64 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R040M2HXTMA1
- RS庫存編號:
- 762-869
- 製造零件編號:
- AIMBG75R040M2HXTMA1
- 製造商:
- Infineon
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TWD782.00
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TWD821.10
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訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年11月03日 發貨
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|---|---|
| 1 - 9 | TWD782.00 |
| 10 - 24 | TWD704.00 |
| 25 + | TWD579.00 |
* 參考價格
- RS庫存編號:
- 762-869
- 製造零件編號:
- AIMBG75R040M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TO263-7 | |
| Series | AIMBG75R | |
| Mount Type | SMD | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 234W | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 9.8mm | |
| Width | 15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TO263-7 | ||
Series AIMBG75R | ||
Mount Type SMD | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 234W | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 9.8mm | ||
Width 15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET is a high-performance power device designed for automotive applications, delivering efficient switching capabilities and robust reliability across demanding environments.
Robust 750V technology ensures high reliability and performance
Designed with enhanced thermal dissipation to improve system efficiency
Features exceptional switching characteristics for increased operational frequency
Vastly reduced switching losses through innovative gate control mechanisms
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