STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG

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TWD117.00

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TWD122.85

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RS庫存編號:
762-553
製造零件編號:
STHU65N110DM9AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Package Type

HU3PAK

Series

STHU65N1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

N

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Height

0.95mm

Width

14.1mm

Standards/Approvals

AEC-Q101

Length

11.9mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.

Very low FOM

Higher dv/dt capability

Excellent switching performance

100% avalanche tested

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