STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG
- RS庫存編號:
- 762-553
- 製造零件編號:
- STHU65N110DM9AG
- 製造商:
- STMicroelectronics
N
可享批量折扣
小計（1 件）*
TWD117.00
(不含稅)
TWD122.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD117.00 |
| 10 - 24 | TWD113.00 |
| 25 - 99 | TWD111.00 |
| 100 - 499 | TWD95.00 |
| 500 + | TWD89.00 |
* 參考價格
- RS庫存編號:
- 762-553
- 製造零件編號:
- STHU65N110DM9AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STHU65N1 | |
| Package Type | HU3PAK | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 11.9mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 0.95mm | |
| Width | 14.1 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STHU65N1 | ||
Package Type HU3PAK | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 11.9mm | ||
Standards/Approvals AEC-Q101 | ||
Height 0.95mm | ||
Width 14.1 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
相關連結
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK STHU65N050DM9AG
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- STMicroelectronics STHU36N Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- STMicroelectronics STHU47 Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU47N60DM6AG
- STMicroelectronics STH Type N-Channel MOSFET 30 V Enhancement, 7-Pin HU3PAK