製造零件編號

Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3

RS庫存編號:: 735-215
製造零件編號:: SI5908BDC-T1-GE3
製造商:: Vishay

Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3

可享批量折扣

小計（1 件）*

TWD32.00

(不含稅)

TWD33.60

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年3月17日發貨

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單位	每單位
1 - 24	TWD32.00
25 - 99	TWD21.00
100 - 499	TWD11.00
500 +	TWD10.00

* 參考價格

RS庫存編號:: 735-215
製造零件編號:: SI5908BDC-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	N channel
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	1206-8 ChipFET
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.05Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±8 V
	Maximum Power Dissipation Pd	3.1W
	Typical Gate Charge Qg @ Vgs	6.5nC
	Maximum Operating Temperature	150°C
	Length	3.1mm
	Width	1.975 mm
	Height	1.1mm
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type N channel
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type 1206-8 ChipFET
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.05Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±8 V
	Maximum Power Dissipation Pd 3.1W
	Typical Gate Charge Qg @ Vgs 6.5nC
	Maximum Operating Temperature 150°C
	Length 3.1mm
	Width 1.975 mm
	Height 1.1mm
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - SI5908BDC-T1-GE3

COO (Country of Origin):: DE

Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3

訂單超過 $1,300.00 免費送貨

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