Vishay Si5418DU Type N-Channel MOSFET, 11.6 A, 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5418DU-T1-GE3
- RS庫存編號:
- 818-1318
- 製造零件編號:
- SI5418DU-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD586.00
(不含稅)
TWD615.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD29.30 | TWD586.00 |
| 760 - 1480 | TWD28.60 | TWD572.00 |
| 1500 + | TWD28.30 | TWD566.00 |
* 參考價格
- RS庫存編號:
- 818-1318
- 製造零件編號:
- SI5418DU-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK ChipFET | |
| Series | Si5418DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.08mm | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK ChipFET | ||
Series Si5418DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.08mm | ||
Height 0.85mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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