DiodesZetex DMP3013SFV P-Channel MOSFET, -35 A, -30 V Enhancement, 8-Pin PowerDI3333-8 DMP3013SFV-7
- RS庫存編號:
- 719-554
- 製造零件編號:
- DMP3013SFV-7
- 製造商:
- DiodesZetex
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TWD67.20
(含稅)
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暫時缺貨
- 從 2026年6月19日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD12.80 | TWD64.00 |
| 50 - 120 | TWD11.20 | TWD56.00 |
| 125 - 495 | TWD10.00 | TWD50.00 |
| 500 + | TWD8.60 | TWD43.00 |
* 參考價格
- RS庫存編號:
- 719-554
- 製造零件編號:
- DMP3013SFV-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -35A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | DMP3013SFV | |
| Package Type | PowerDI3333-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33.7nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 0.85mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -35A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series DMP3013SFV | ||
Package Type PowerDI3333-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33.7nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 0.85mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V P-Channel enhancement mode MOSFET, designed to provide superior switching performance while minimising on-state resistance. Its Compact PowerDI3333-8 packaging is thermally efficient, enabling higher density in end products. This MOSFET is particularly suited for high-efficiency power management applications, offering significant advantages in design flexibility and space optimisation.
Small form factor reduces board area by 33% compared to SO-8 packages
Thermally efficient design allows for higher density in end products
ESD protected gate increases reliability in sensitive applications
Totally lead-free and fully RoHS compliant, ensuring environmental safety
Halogen and antimony free, making it a 'green' device
Weight is approximately 0.03 grams, facilitating lightweight designs
Meets UL flammability classification rating of 94V-0 for enhanced safety
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