DiodesZetex DMG3406L N channel-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 DMG3406L-13
- RS庫存編號:
- 719-488
- 製造零件編號:
- DMG3406L-13
- 製造商:
- DiodesZetex
N
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可享批量折扣
小計（1 包，共 5 件）*
TWD21.00
(不含稅)
TWD22.05
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月18日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 120 | TWD4.20 | TWD21.00 |
| 125 - 495 | TWD3.80 | TWD19.00 |
| 500 - 2495 | TWD3.20 | TWD16.00 |
| 2500 - 4995 | TWD2.80 | TWD14.00 |
| 5000 + | TWD2.60 | TWD13.00 |
* 參考價格
- RS庫存編號:
- 719-488
- 製造零件編號:
- DMG3406L-13
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMG3406L | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 2.5 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMG3406L | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 2.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high efficiency power management applications. Engineered to minimise on-state resistance while delivering superior switching performance, this component is Ideal for battery charging, DC-DC converters, and portable power adaptors. Its robust mechanical design, combined with a lead-free and RoHS-compliant construction, underscores its commitment to environmental sustainability and reliability across a wide range of applications. Capable of handling substantial current loads, this MOSFET serves as an essential component for modern electronic systems requiring reliable power management.
Low on resistance for improved efficiency in power management
Fast switching speed enhances performance in dynamic applications
Low input capacitance reduces system power requirements
Designed for a maximum drain-source voltage of 30V, ensuring versatility
RoHS compliant, supporting eco-friendly device production
Total lead-free construction, aligning with environmental standards
High continuous drain current capability of 3.6A at 25°C maximizes application performance
Moisture sensitivity level 1 ensures robust reliability in various environments
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