DiodesZetex DMN63D8L N channel-Channel MOSFET, 400 mA, 30 V Enhancement, 3-Pin SOT-23 DMN63D8L-7
- RS庫存編號:
- 718-536
- 製造零件編號:
- DMN63D8L-7
- 製造商:
- DiodesZetex
可享批量折扣
小計（1 包，共 5 件）*
TWD10.00
(不含稅)
TWD10.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月20日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 120 | TWD2.00 | TWD10.00 |
| 125 - 495 | TWD1.80 | TWD9.00 |
| 500 - 2495 | TWD1.60 | TWD8.00 |
| 2500 + | TWD1.40 | TWD7.00 |
* 參考價格
- RS庫存編號:
- 718-536
- 製造零件編號:
- DMN63D8L-7
- 製造商:
- DiodesZetex
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN63D8L | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 520mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN63D8L | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 520mW | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high-efficiency power management applications. This versatile component prioritises minimal on-state resistance while ensuring superior switching performance. Ideal for applications such as motor control, power management functions, and backlighting, this MOSFET offers a reliable and efficient solution to handle demanding power requirements. With a robust construction compliant with AEC-Q101 standards, it is also classified as a ’Green’ device, underscoring its environmentally friendly credentials. Its Compact SOT23 package facilitates space-efficient placements in various electronics.
Achieves Low on resistance, ensuring high efficiency in power management
Boasts low input capacitance for fast switching speeds, enhancing overall performance
Handles a maximum drain-source voltage of 30V, making it versatile for various applications
Offers continuous drain currents up to 350mA at 25°C, supporting reliable operation in demanding scenarios
Designed with ESD protection on the gate to safeguard the device and enhance longevity
Complies with RoHS and is free from lead, halogen, and antimony, supporting environmentally-friendly manufacturing
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