ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計 20 件 (按連續帶提供)*

TWD3,630.00

(不含稅)

TWD3,811.60

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 200 件從 2026年7月16日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
20 - 98TWD181.50
100 - 198TWD163.00
200 +TWD128.00

* 參考價格

包裝方式:
RS庫存編號:
687-343P
製造零件編號:
RY7P250BMTBC
製造商:
ROHM
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

100V

Series

RY7P250BM

Package Type

DFN8080T8LSHAAI

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.86mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

240nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

RoHS

Length

1.7mm

Width

1.70 mm

Automotive Standard

No

The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.

Low on resistance for enhanced efficiency

Wide-SOA characteristics for superior reliability

Designed to handle continuous drain currents up to 250A

High pulsed drain current capability at ±900A

Excellent thermal management with thermal resistance of 0.44°C/W

Suitable for a wide operating temperature range of -55 to +175°C

Complies with RoHS and halogen-free standards.