STMicroelectronics STL MOSFET, 103 A, 40 V, 8-Pin PowerFLAT
- RS庫存編號:
- 365-175
- 製造零件編號:
- STL100N4LF8
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 件）*
TWD44.00
(不含稅)
TWD46.20
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD44.00 |
| 10 - 99 | TWD40.00 |
| 100 - 499 | TWD37.00 |
| 500 - 999 | TWD34.00 |
| 1000 + | TWD31.00 |
* 參考價格
- RS庫存編號:
- 365-175
- 製造零件編號:
- STL100N4LF8
- 製造商:
- STMicroelectronics
規格
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 103A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.85mΩ | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | JEDEC | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 103A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.85mΩ | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals JEDEC | ||
Height 0.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is a Advanced STripFET F8 achieve higher switching frequencies than previous technologies, thanks to low device capacitances that minimize dynamic parameters and switching losses. This allows designers to use smaller capacitive and magnetic components in more Compact and cost-effective solutions, while increasing the power density of the final application.
Optimized gate charge for Faster commutation speeds
Higher immunity to spurious turn-on
Lower RDS(on) for higher system efficiency
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