製造零件編號

Infineon IGLT65 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1

RS庫存編號:: 351-889
製造零件編號:: IGLT65R035D2ATMA1
製造商:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1

可享批量折扣

小計（1 件）*

TWD478.00

(不含稅)

TWD501.90

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月25日發貨

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單位	每單位
1 - 9	TWD478.00
10 - 99	TWD431.00
100 +	TWD397.00

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RS庫存編號:: 351-889
製造零件編號:: IGLT65R035D2ATMA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HDSOP-16
	Series	IGLT65
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.042Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Power Dissipation Pd	154W
	Maximum Gate Source Voltage Vgs	10 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HDSOP-16
	Series IGLT65
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.042Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Power Dissipation Pd 154W
	Maximum Gate Source Voltage Vgs 10 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R035D2ATMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLT65 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1

訂單超過 $1,300.00 免費送貨

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