製造零件編號

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

RS庫存編號:: 351-885
製造零件編號:: IGLT65R110D2ATMA1
製造商:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

可享批量折扣

小計（1 包，共 2 件）*

TWD322.00

(不含稅)

TWD338.10

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月14日發貨

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單位	每單位	每包*
2 - 18	TWD161.00	TWD322.00
20 - 198	TWD145.00	TWD290.00
200 - 998	TWD133.50	TWD267.00
1000 - 1998	TWD124.00	TWD248.00
2000 +	TWD111.00	TWD222.00

* 參考價格

RS庫存編號:: 351-885
製造零件編號:: IGLT65R110D2ATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HDSOP-16
	Series	IGLT65
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.14Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	55W
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HDSOP-16
	Series IGLT65
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.14Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 55W
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R110D2ATMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

訂單超過 $1,300.00 免費送貨

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