製造零件編號

Infineon Type N-Channel MOSFET, 195 A, 2000 V Enhancement FF5MR20KM1HHPSA1

RS庫存編號:: 349-317
製造零件編號:: FF5MR20KM1HHPSA1
製造商:: Infineon

Infineon Type N-Channel MOSFET, 195 A, 2000 V Enhancement FF5MR20KM1HHPSA1

小計（1 件）*

TWD29,199.00

(不含稅)

TWD30,658.95

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月06日發貨

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單位	每單位
1 +	TWD29,199.00

* 參考價格

RS庫存編號:: 349-317
製造零件編號:: FF5MR20KM1HHPSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	2000V
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	15.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	6.15V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 60749, IEC 60747, IEC 60068
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 2000V
	Mount Type Screw
	Maximum Drain Source Resistance Rds 15.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 6.15V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 60749, IEC 60747, IEC 60068
	Automotive Standard No

Datasheet - FF5MR20KM1HHPSA1

COO (Country of Origin):: HU

The Infineon 62 mm CoolSiC MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre applied Thermal Interface Material.

High current density

Low switching losses

Superior gate oxide reliability

Robust integrated body diode

High cosmic ray robustness

High speed switching module

Symmetrical module design

Infineon Type N-Channel MOSFET, 195 A, 2000 V Enhancement FF5MR20KM1HHPSA1

訂單超過 $1,300.00 免費送貨

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