Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 145-9658
- 製造零件編號:
- IRFP7530PBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 25 件)*
TWD1,450.00
(不含稅)
TWD1,522.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 500 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 100 | TWD58.00 | TWD1,450.00 |
| 125 + | TWD56.30 | TWD1,407.50 |
* 參考價格
- RS庫存編號:
- 145-9658
- 製造零件編號:
- IRFP7530PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-247 | |
| Series | StrongIRFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-247 | ||
Series StrongIRFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF
This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a VITAL component in Advanced circuits used in automation and motor control.
Features & Benefits
• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability
Applications
• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics
What are the benefits of using it in high-current applications?
Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.
How does temperature affect performance?
Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.
Can it be integrated into existing circuits?
Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.
What should be considered for effective heat dissipation?
To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.
Is it suitable for use in automotive applications?
Yes, its robust specifications meet the requirements of automotive applications, providing a suitable choice in high-temperature and high-power settings.
相關連結
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- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
