Infineon CoolSiC Type N-Channel MOSFET, 38 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R140M1HXUMA1
- RS庫存編號:
- 349-046
- 製造零件編號:
- IMDQ75R140M1HXUMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD389.00
(不含稅)
TWD408.44
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 750 件從 2026年1月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD194.50 | TWD389.00 |
| 20 - 198 | TWD175.00 | TWD350.00 |
| 200 - 998 | TWD161.50 | TWD323.00 |
| 1000 - 1998 | TWD150.00 | TWD300.00 |
| 2000 + | TWD134.50 | TWD269.00 |
* 參考價格
- RS庫存編號:
- 349-046
- 製造零件編號:
- IMDQ75R140M1HXUMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.
Infineon proprietary die attach technology
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
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