Infineon CoolSiC Type N-Channel MOSFET, 64 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R027M1HXUMA1

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  • 2026年7月13日 發貨
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RS庫存編號:
349-041
製造零件編號:
IMDQ75R027M1HXUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

750V

Series

CoolSiC

Package Type

PG-HDSOP-22

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

273W

Typical Gate Charge Qg @ Vgs

49nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.

Infineon proprietary die attach technology

Cutting edge top side cooling package

Driver source pin available

Enhanced robustness to withstand bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Best in class thermal dissipation

Reduced switching losses through improved gate control

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