Microchip PD70224 N-Channel MOSFET, 2 A, 74 V, 40-Pin QFN PD70224ILQ-TR
- RS庫存編號:
- 333-012
- 製造零件編號:
- PD70224ILQ-TR
- 製造商:
- Microchip
小計(1 卷,共 2000 件)*
TWD441,000.00
(不含稅)
TWD463,040.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD220.50 | TWD441,000.00 |
* 參考價格
- RS庫存編號:
- 333-012
- 製造零件編號:
- PD70224ILQ-TR
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 74V | |
| Series | PD70224 | |
| Package Type | QFN | |
| Mount Type | Surface | |
| Pin Count | 40 | |
| Maximum Drain Source Resistance Rds | 0.26Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 192mV | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | |
| Width | 8mm | |
| Height | 1mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 74V | ||
Series PD70224 | ||
Package Type QFN | ||
Mount Type Surface | ||
Pin Count 40 | ||
Maximum Drain Source Resistance Rds 0.26Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 192mV | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | ||
Width 8mm | ||
Height 1mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Microchip Dual pack of MOSFET based full bridge rectifiers. It contains low Rds 0.16Ω N channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for driving the MOSFETs is on chip, including a charge pump for driving the high side N channel MOSFETs.
Active circuit with low forward drop to replace dissipative passive diode bridges
Self contained drive circuitry for MOSFETs
Designed to support IEEE-802.3af / at / bt and PoH
Integrated 0.16 Ohm N channel MOSFETs for 0.3 Ohm total path resistance
Power present indicator signals for identifying 4 pair bridge power
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