STMicroelectronics STF Type N-Channel MOSFET, 12 A, 800 V, 3-Pin TO-220FP
- RS庫存編號:
- 330-457
- 製造零件編號:
- STF80N340K6
- 製造商:
- STMicroelectronics
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TWD144.00
(不含稅)
TWD151.20
(含稅)
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單位 | 每單位 |
|---|---|
| 1 + | TWD144.00 |
* 參考價格
- RS庫存編號:
- 330-457
- 製造零件編號:
- STF80N340K6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STF | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 25.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 30.6mm | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STF | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 25.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 30.6mm | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
The STMicroelectronics High voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
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