STMicroelectronics SCT0 MOSFET, 90 A, 1200 V HU3PAK SCT019H120G3AG

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包裝方式：
RS庫存編號:
330-318
製造零件編號:
SCT019H120G3AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

1200V

Package Type

HU3PAK

Series

SCT0

Maximum Drain Source Resistance Rds

18.5mΩ

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

555W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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