STMicroelectronics SCT0 MOSFET, 90 A, 1200 V, 7-Pin HU3PAK SCT019HU120G3AG
- RS庫存編號:
- 330-230
- 製造零件編號:
- SCT019HU120G3AG
- 製造商:
- STMicroelectronics
可享批量折扣
小計（1 件）*
TWD1,240.00
(不含稅)
TWD1,302.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD1,240.00 |
| 10 - 99 | TWD1,116.00 |
| 100 + | TWD1,029.00 |
* 參考價格
- RS庫存編號:
- 330-230
- 製造零件編號:
- SCT019HU120G3AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | HU3PAK | |
| Series | SCT0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 111.2nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type HU3PAK | ||
Series SCT0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 111.2nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
相關連結
- STMicroelectronics SCT0 MOSFET 1200 V HU3PAK SCT019H120G3AG
- STMicroelectronics SCT0 Power MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- STMicroelectronics SCT0 Type N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT0 MOSFET 1200 V, 3-Pin Hip-247 SCT070W120G3AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics STHU36N Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- STMicroelectronics STHU47 Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU47N60DM6AG