Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

RS庫存編號:: 284-899
製造零件編號:: IPT65R040CFD7XTMA1
製造商:: Infineon

Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

小計（1 卷，共 2000 件）*

TWD439,600.00

(不含稅)

TWD461,580.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月24日發貨

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單位	每單位	每卷*
2000 +	TWD219.80	TWD439,600.00

* 參考價格

RS庫存編號:: 284-899
製造零件編號:: IPT65R040CFD7XTMA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	650V CoolMOS CFD7 SJ Power Device
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	97nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	347W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series 650V CoolMOS CFD7 SJ Power Device
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 97nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 347W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC

Datasheet - IPT65R040CFD7XTMA1

The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.

Ultra fast body diode minimises switching losses

Best in class RDS(on) for efficiency improvements

Robust against hard commutation for reliability

Handles increased bus voltage for safety

Optimised for high power density in Compact designs

Excels in light load conditions for industrial SMPS applications

Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

訂單超過 $1,300.00 免費送貨

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