Infineon 600V CoolMOS Type N-Channel MOSFET, 149 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1

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包裝方式:
RS庫存編號:
284-735
製造零件編號:
IPDQ60R015CFD7XTMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

149A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

657W

Typical Gate Charge Qg @ Vgs

251nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, JEDEC for Industrial Applications

Automotive Standard

No

The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor is engineered to excel in high voltage power applications, delivering unparalleled efficiency and reliability. Utilising Advanced super junction technology, this product offers a seamless upgrade over its predecessor, the CFD2 series. With a design focused on soft switching applications such as phase shift full bridge converters and LLC circuits, it ensures optimal performance. Enhanced features like reduced gate charge and minimal reverse recovery charge make this transistor a go to solution for modern energy systems. Its Compact PG HDSOP 22 package guarantees easy integration into existing designs, maximising power density while minimising installation complexity. The CoolMOS CFD7 is also fully compliant with JEDEC standards for industrial applications, ensuring long term stability and reliability in demanding environments.

Optimised for soft switching topologies

Ultra fast body diode for high speed switching

Integrated thermal management extends longevity

Tailored for resonant topologies boosting efficiency

Compact design simplifies PCB mounting

Maximises power density for space constraints

Robust commutation ensures reliable operation

Enhances reliability standards for industrial use

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