Infineon CoolMOS CM8 Type N-Channel Power MOSFET, 135 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R016CM8XTMA1
- RS庫存編號:
- 348-994
- 製造零件編號:
- IPDQ60R016CM8XTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD550.00
(不含稅)
TWD577.50
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD550.00 |
| 10 - 99 | TWD495.00 |
| 100 + | TWD457.00 |
* 參考價格
- RS庫存編號:
- 348-994
- 製造零件編號:
- IPDQ60R016CM8XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | CoolMOS CM8 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDECforIndustrialApplications, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series CoolMOS CM8 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDECforIndustrialApplications, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
相關連結
- Infineon 600V CoolMOS Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1
- Infineon 600V CoolMOS Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60R010S7XTMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R008M1HXUMA1
- Infineon CoolMOSTM8thgeneration Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R037CM8XTMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R140M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R027M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R060M1HXUMA1
- Infineon IPQ Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T017S7XTMA1