ROHM SCT Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 7-Pin TO-263-7LA SCT3160KWAHRTL
- RS庫存編號:
- 265-380
- 製造零件編號:
- SCT3160KWAHRTL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD2,336.00
(不含稅)
TWD2,452.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,000 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD233.60 | TWD2,336.00 |
| 100 + | TWD222.00 | TWD2,220.00 |
* 參考價格
- RS庫存編號:
- 265-380
- 製造零件編號:
- SCT3160KWAHRTL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | TO-263-7LA | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 208mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 15.4mm | |
| Width | 10.2 mm | |
| Height | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type TO-263-7LA | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 208mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 15.4mm | ||
Width 10.2 mm | ||
Height 4.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET is an AEC-Q101 qualified automotive grade SiC trench MOSFET. It features high voltage resistance, low ON resistance, and fast switching speed, making it an ideal choice for demanding automotive applications that require efficient and reliable performance.
RoHS compliant
Pb free lead plating
Fast reverse recovery
Easy to parallel
Simple to drive
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