ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1

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TWD372.75

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  • 2026年7月21日 發貨
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25 - 75TWD14.20TWD355.00
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250 - 475TWD12.50TWD312.50
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包裝方式:
RS庫存編號:
264-855
製造零件編號:
R6002JND4TL1
製造商:
ROHM
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品牌

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223-3

Series

R60

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.25Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.0nC

Maximum Power Dissipation Pd

6.6W

Forward Voltage Vf

1.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM 600V 1A SOT-223-3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Fast reverse recovery time

Low on-resistance

Fast switching speed

Drive circuits can be simple

Pb-free plating and RoHS compliant

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