onsemi NTMFS Type N-Channel MOSFET, 414 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D5N04XMT1G
- RS庫存編號:
- 220-589
- 製造零件編號:
- NTMFS0D5N04XMT1G
- 製造商:
- onsemi
可享批量折扣
小計（1 組，共 5 件）*
TWD312.00
(不含稅)
TWD327.60
(含稅)
添加 25 件 件可免費送貨
暫時缺貨
- 從 2026年8月24日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | TWD62.40 | TWD312.00 |
| 50 - 95 | TWD59.40 | TWD297.00 |
| 100 - 495 | TWD55.00 | TWD275.00 |
| 500 - 995 | TWD50.60 | TWD253.00 |
| 1000 + | TWD48.60 | TWD243.00 |
* 參考價格
- RS庫存編號:
- 220-589
- 製造零件編號:
- NTMFS0D5N04XMT1G
- 製造商:
- onsemi
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 414A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 163W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 97.5nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 414A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 163W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 97.5nC | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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