Nexperia PSM Type N-Channel MOSFET, 325 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40SSHJ

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小計(1 卷,共 2000 件)*

TWD155,600.00

(不含稅)

TWD163,380.00

(含稅)

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RS庫存編號:
219-470
製造零件編號:
PSMN1R0-40SSHJ
製造商:
Nexperia
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品牌

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

325A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

137nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

1.6mm

Length

8mm

Automotive Standard

No

The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

Avalanche rated

Wave solder able

Superfast switching with soft recovery

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