Nexperia PSM Type N-Channel MOSFET, 120 A, 30 V Enhancement, 5-Pin TO-263 PSMN1R5-30BLEJ
- RS庫存編號:
- 219-444
- 製造零件編號:
- PSMN1R5-30BLEJ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 800 件）*
TWD86,720.00
(不含稅)
TWD91,056.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 + | TWD108.40 | TWD86,720.00 |
* 參考價格
- RS庫存編號:
- 219-444
- 製造零件編號:
- PSMN1R5-30BLEJ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 401W | |
| Typical Gate Charge Qg @ Vgs | 228nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 401W | ||
Typical Gate Charge Qg @ Vgs 228nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia Logic Level N-channel MOSFET is housed in a D2PAK package and qualified for operation up to 175°C. It is designed for use in a broad range of industrial, communications, and domestic applications, offering reliable performance in demanding environments.
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
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