Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN3R7-100BSEJ

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  • 2026年7月08日 發貨
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包裝方式:
RS庫存編號:
219-348
製造零件編號:
PSMN3R7-100BSEJ
製造商:
Nexperia
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品牌

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

3.95mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

25°C

Typical Gate Charge Qg @ Vgs

176nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

405W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

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