Nexperia PSM Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLDX
- RS庫存編號:
- 219-313
- 製造零件編號:
- PSMN1R0-30YLDX
- 製造商:
- Nexperia
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Each (On a Reel of 3000)
TWD30.70
(不含稅)
TWD32.24
(含稅)
- RS庫存編號:
- 219-313
- 製造零件編號:
- PSMN1R0-30YLDX
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 238W | |
| Typical Gate Charge Qg @ Vgs | 57.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 238W | ||
Typical Gate Charge Qg @ Vgs 57.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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